GaN power transistor switches at high frequency switching for DC-DC power conversion
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eeNews Europe
The EPC2018 is a 5.76 mm2, 150-VDS, 12-A device with a maximum RDS(on) of 25 milliohms with 5V applied to the gate. The GaN power transistor delivers high performance due to its ultra high switching frequency, low RDS(on), low QG and in a small package.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2018 is much smaller and has superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, as well as many other circuits needing nanosecond switching speeds.
The EPC2018costs $6.54 (1000) and is available through Digi-Key.
EPC; https://epc-co.com/epc/Products/eGaNFETs/EPC2018.aspx
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