GaN RF power transistor targets cellular base stations
The announcement comes only a few months following the company’s introduction of the MMRF5014H – Freescale’s first GaN RF power transistor for military and industrial applications, which continues to lead the industry in thermal and wideband RF performance for 100 W-class GaN transistors.
While GaN migration has been cost prohibitive in the past, recent commercial and technological advances are driving manufacturing costs lower. A long-time leader in semiconductor manufacturing, Freescale is unleashing the advantages of GaN for some of the biggest markets in the world and enabling a large-scale rollout of GaN power amplifiers in mainstream commercial base station markets.
Freescale’s Airfast family of RF power products covers the entire range of wireless cellular spectrum from 600 MHz to 3.8 GHz, with multiple semiconductor technology options. The A2G22S160-01S offers state-of-the-art performance in the frequency range between 1800 MHz and 2200 MHz. For example, in a 40 W Doherty two-way asymmetrical amplifier employing one A2G22S160-01S in the carrier path and two in the peaking path, maximum output power is 56.2 dBm. With 8 dB output back-off (OBO), gain is 15.4 dB and efficiency is 56.7 percent. Adjacent-channel power (ACP) is -55 dBc with digital predistortion (DPD) when driven by two 20 MHz LTE carriers with an aggregate 40 MHz carrier bandwidth.
The A2G22S160-01S GaN RF power transistor is now in production, with reference designs.
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