GaN RF power transistors in 10 to 200-W ratings

GaN RF power transistors in 10 to 200-W ratings

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By eeNews Europe

Housed in a compact and thermally stable ceramic package, the whole CLF1G family of devices are ideal for use in a broad range of applications that need to meet specific requirements of SWaP (size, weight and power).

The Senior Director of Marketing, Ampleon Multi Market Business Unit, Thijs Tullemans commented, “We are investing heavily in both LDMOS and GaN technology, as we see GaN gaining momentum beyond the A&D market, into areas such as cellular infrastructure. Indeed we see significant growth opportunities in both market segments, but with respect to GaN, the technology offers us the opportunity to broaden our product offering to our customers, and we will be releasing more in-depth news on the GaN front in the coming months.”

Optimized for best in class linearity, power efficiency, and broadband power performance, Ampleon’s GaN devices are available with electrical models, reference designs and demonstration boards. Typical applications include use in commercial aviation and radar applications, aerospace and defence systems, and broadband systems.

Devices available include the CLF1G0035S-50, a broadband 50-W amplifier capable of operation from DC through to 3.5 GHz that is designed for operation up to 50 V and having excellent VSWR (ruggedness) capabilities of 10:1. 100-W devices have just been released, and Ampleon are currently sampling other types for mass production during early 2016.

Being a European supplier, Ampleon is a so called ‘ITAR-free’ supplier, a factor that is appreciated by its customers in the worldwide A&D marketplace.

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