GaN rising in high-power RF

Market news |
By Jean-Pierre Joosting

Gallium nitride (GaN) is capturing market share in high-power RF semiconductors, especially in wireless infrastructure, the market research firm said.

“GaN is increasing its market share in 2016, and we believe it will be a significant force by 2021,” said Lance Wilson, research director at ABI Research, in a statement. “This now mainstream technology bridges the gap between two older technologies, exhibiting the high-frequency performance of Gallium Arsenide and power handling capabilities of Silicon LDMOS.”

Outside of wireless infrastructure defense-oriented market segments show the strongest opportunities for GaN.

Related links and articles:

News articles:

Ex-Bridgelux execs launch wide band gap startup

Infineon to buy Cree’s Wolfspeed SiC business

Macom sues Infineon over GaN rights


Linked Articles
eeNews Europe