GaN rising in high-power RF
Gallium nitride (GaN) is capturing market share in high-power RF semiconductors, especially in wireless infrastructure, the market research firm said.
“GaN is increasing its market share in 2016, and we believe it will be a significant force by 2021,” said Lance Wilson, research director at ABI Research, in a statement. “This now mainstream technology bridges the gap between two older technologies, exhibiting the high-frequency performance of Gallium Arsenide and power handling capabilities of Silicon LDMOS.”
Outside of wireless infrastructure defense-oriented market segments show the strongest opportunities for GaN.
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