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GaN soon on 8-inch silicon wafers, hopes MACOM

GaN soon on 8-inch silicon wafers, hopes MACOM

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By eeNews Europe



Built using the company’s proprietary 4th generation GaN on Silicon (GaN on Si) process, the 100W part (MAGX-100027-100C0P) is optimized for DC to 2.7GHz operation and is aimed at defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.

It supports CW, pulsed, and linear operation with output power levels up to 100W (50 dBm). Operating from 50V, the device support continuous wave operation with a 18.3dB gain at 2.45GHz, and 70% drain efficiency.

According to the company, such parts deliver a performance that rivals expensive GaN on Silicon Carbide at a projected volume production cost structure below that of incumbent LDMOS technology, and thus its Gen4 GaN technology could finally bring GaN to the mainstream market, on silicon, while enabling a power density more than four times that of LDMOS.

The company is sampling its 100W parts now, with 200W and 300W devices soon to be announced, but that’s not all. It has big plans to ramp up its production, from today’s 4-inch wafers to 6 or 8" silicon wafers.

Over the past few years, MACOM has been growing through a number of strategic acquisitions, including several optoelectronic chip companies such as Optomai Inc. back in 2011, or Photonic Controls LLC and BinOptics Corporation in 2014, but also Mindspeed Technologies for its foothold in wireless basestation infrastructures, and more importantly Nitronex, LLC (acquired in 2014 for its GaN-on-Silicon products and patents portfolio, including a unique process).

"MACOM now truly offers solutions across the entire wireless communication chain, from RF to optical communication links", emphasized the company’s EMEA sales director, Markus Schaefer, "In fact our company has evolved so much over the past five years that internally, we like to call ourselves the new MACOM" he added.


In particular, the Nitronex acquisition means the company holds key patents for RF devices built using GaN-on-Silicon, so in effect, other companies considering using GaN-on-Silicon instead of GaN-on-Silicon Carbide would have to license the IP.

In order to further lower the cost of GaN-on-Silicon and also to ensure double sourcing for a broader adoption of its technology, MACOM is looking for fab partners willing to share some of their capacity on 8-inch silicon wafers.

"We’ll be making an announcement soon" promised Mike Ziehl, Vice President of Marketing for the RF and Microwave business unit at MACOM.

"If you consider an average selling price of $20 for GaN RF transistors, 50 million of them shipping yearly just for base stations, and possibly another 50 million transistors for the RF energy market (including microwave ovens), that makes up a two billion dollars addressable market opening its doors to our technology", Ziehl added.

"We are a 500 million dollars company today, we could well double in size within the next five years", he added optimistically.

The company is confident that thanks to its IP portfolio and with strategic licensing agreements, it could lay the foundation for a new GaN supply chain model whereby it could become the preeminent supplier of compound semiconductors for RF and microwave applications.

Visit MACOM at www.macom.com

Related articles:
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ON Semiconductor partners Transphorm for GaN solutions
Next-gen GaN transistors come in sight, targeting electromobility
€5.7 Million for Exagan to go ahead with GaN-on-Si 200mm wafers

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