The GS-065-150 GaN transitor has 100 times lower switching losses than comparable IGBTs, providing a 99% reduction in switching losses in high power conversion designs.
The chip will be shown at PCIM Europe in Nuremberg, Germany next week, alongside a range of products, devices, and systems from customers and partners, with many now in production. These include the GS-065 low current (3.5A to 11A) GaN transistor line with EZDrive circuit compatibility. The combination of a smaller, next generation design and the EZDrive circuit, which eliminates the need for a discrete driver, significantly reduces bill of materials cost and improves performance.
“Now is a great time to be in the power industry. Every 20 years or so there is an inflection point, which is now with GaN power devices,” said Paul Wiener, Vice-President, Strategic Marketing for GaN Systems. “Coming from the Applied Power Electronics (APEC) where we saw overwhelming momentum in GaN acceptance and implementation, we expect that enthusiasm to continue at PCIM.”
Reference tools at the show include a 50W wireless power amplifier, a small size, low cost, and high efficiency evaluation boardideal for wireless power transfer and charging applications; 1.5 kW and 3 kW Bridgeless Totem Pole PFC reference designs using GaNSystems 650 V power transistors; and high performance Insulated Metal Substrate (IMS) half-bridge thermal mounting solutions, which provide design flexibility and scalability with three power level configurations up to 1.5 kW, 3 kW, and 6 kW.
Customer demonstrations spaat the show will include industrial, solar, consumer, and transportation applications with AC-DC and DC-DC power supplies, energy storage systems, laptop AC chargers as well as high power wireless charging systems for drones, robots, scooters, and 5G applications. The latest GaN power designs for the automotive market include an EV onboard charger, traction inverter, and a 480W, 4-channel LiDAR laser-driver.
Related GaN stories:
- GaN BOOSTS ONBOARD CHARGER POWER DENSITY
- GaN SYSTEMS SIGNS AEROSPACE THREE-PHASE POWER DEAL
- THERMAL SUBSTRATE BOOST FOR GaN TRANSISTORS