GaN Systems to use RFMD foundry production
Using the RFMD foundry facilities, the GaN Systems announced that they had successfully achieved the high voltage, high current, and low leakage capability required for their current range of power devices.
“GaN Systems have been using RFMD’s GaN on SiC foundry capabilities for the past two years in the development of our range of power switches,” said Girvan Patterson, GaN Systems’ C.E.O. “The close cooperation we have achieved with RFMD during the development of these devices to meet our requirements has been outstanding.”
John Roberts, the C.T.O. for GaN Systems adds, “We have been able to achieve the higher currents facilitated by the quasi-vertical structures of our island design with the higher voltage operation and higher power dissipation afforded by the excellent electrically insulating and thermal conduction of the SiC starting wafer.”
The unique Island topology of GaN Systems devices allows their transistors to be manufactured on RF based processes, obviating the need for expensive new foundry investment.
www.gansystems.com
www.rfmd.com
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