GaN transistors offer 650V rating and current sense
Cambridge GaN Devices Ltd. (Cambridge, England) has launched its first four products, the ICeGaN 650V H1 series.
The company was spun out of the University of Cambridge in 2016 to commercialize power semiconductors products that use gallium nitride (GaN)-on-silicon substrates.
The 650V H1 series can make use of standard MOSFET drivers with no external components needed for protection. Engineers will be able to use CGD’s GaN-based technology to replace silicon-based power devices or with other GaN solutions.
The range offers RDSon from 55mohm to 200mohm in DFN5x6 and DFN8x8 packages. It can switch between 8.5A and 27A depending on the RDSon These power devices come with current sensing capability without the need for a secondary component.
Cascode configuration
CGD says that its patented ICeGaN (Integrated Circuit Enhancement Mode GaN) technology merges the ease-of-use benefits seen in cascode configurations with the simplicity of a single-die eMode (normally off) high-electron-mobility transistors (HEMTs).
The company claims that is single-die components deliver up to 50 percent lower power losses compared with legacy silicon die. The technology is scalable on power and voltage for future developments.
Initial applications include consumer electronic products such as mobile chargers, adapters for laptops, gaming and, in general, SMPS (switched-mode power supplies) for consumer applications. The 650V H1 Series portfolio is also a first step into segments such as lighting and server power. Further expansion is planned towards high-power servers and telecom markets for data centers, photovoltaics (PV) inverters and renewable energy production, targeting electric vehicle/hybrid electric vehicle (EV/HEV) systems in the future.
“Our GaN-based technology makes a difficult engineering challenge easy while operating at a high level of efficiency,” said CGD’s CEO and founder Giorgia Longobardi, in a statement.
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