GaN transistors target high-voltage, high-current applications
The new GS-065-060-5-T-A GaN transistor provides low RDS(on) (25 mΩ) and features a 60A IDS rating and GaN Systems’ high-performance GaNPX packaging, which enables ultra-low inductance and best thermal resistance in a compact form factor. Leveraging these transistors, wide ranging automotive applications from onboard battery chargers, DC-DC converters, EV traction inverters, electronic power steering, and motor drives can benefit from high reliability and reductions in volume, weight, and cost.
GaN Systems methodology for the qualification of its transistors is based upon a collaboration with select customers in the global automotive industry. This joint effort resulted in an enhanced test methodology, AutoQual+, using AEC-Q101 tests as a baseline and then adding additional tests that address GaN-specific wear-out mechanisms. The additional testing of AutoQual+ ensures GaN Systems’ power semiconductors are robust in the rigors of the automobile environment. As a result, GaN Systems products meet the lifetime requirements the automotive industry requires with demonstrated FIT rates much less than 1, setting new benchmarks in the GaN industry.
More information: datasheet
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
