GaN wideband power amplifier covers 30 MHz to 2500 MHz
Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input-matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.
Ease of integration is accomplished through the incorporation of an optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.
Key features include a 50 Ω internally matched input, output power of 9 W, gain of 12 dB, 30 MHz to 2500 MHz instantaneous bandwidth, power added efficiency of 45% over 30 MHz to 2500 MHz) or 50% over 200 MHz to 1800 MHz. Large signal models are available. Typical applications cover Class AB operation for public mobile radio, test and instrumentation, power amplifier stage for commercial wireless infrastructure, civilian and military radar, as well as general purpose transmitter amplification.
For further information: www.rfmd.com.
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