GaN wideband pulsed power amplifier covers 2.8 GHz to 3.4 GHz
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By
eeNews Europe
Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. Key features include advanced GaN HEMT and heat-sink technology, optimized evaluation board layout for 50 W operation, small signal gain of 12 dB and drain efficiency of 52%.
High terminal impedance enables wideband operation and minimizes overall PCB real estate. This matched GaN transistor is packaged in a hermetic, flanged ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.
For further information: www.rfmd.com.
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