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Globalfoundries buys GaN IP portfolio from Tagore

Globalfoundries buys GaN IP portfolio from Tagore

Business news |
By Peter Clarke

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Foundry chipmaker GlobalFoundries Inc. has acquired a portfolio of gallium nitride power semiconductor intellectual property form Tagore Technology Inc. (Chicago, Illinois).

Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) and GaN-SiC semiconductor technology for Radio Frequency (RF) and power management applications. It has its engineering base in Kolkata. India.

The amount Globalfoundries has paid for the acquisition was not disclosed.

The technology is suitable for power applications in automotive, internet of things (IoT) and the artificial intelligence (AI) datacenter, Globalfoundries said. The acquisition expands GF’s power IP portfolio and the deal includes a GaN engineering team from Tagore.

“The accelerating demand for more power efficient semiconductors is dramatically increasing, and Tagore has been at the forefront of developing disruptive solutions using GaN technology for a wide range of power devices,” said Amitava Das, co-founder and chief operating officer of Tagore Technology. “The team and I are excited to join GlobalFoundries to increase our focus on market-leading IP that will help address power design challenges and support the continued evolution of automotive, industrial and AI datacenter power delivery systems.”

In February 2024, GF was awarded US$1.5 billion in direct funding under the US CHIPS and Science Act, part of that investment is targeted towards enabling the high-volume manufacturing of critical technologies including GaN to securely produce more essential chips.

Related links and articles:

www.gf.com

www.tagoretech.com

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