
Guerrilla buys Gallium Semiconductor’s GaN product lines
Guerrilla RF Inc. (Greensboro, North Carolina) has acquired the entire portfolio of GaN power amplifiers and front-end modules from Singaporean RF GaN chip vendor Gallium Semiconductor.
It was announced in February that Gallium Semiconductor is closing its doors, including those of its R&D center in Nijmegen, The Netherlands (see Investor set to close RF GaN supplier Gallium Semiconductor).
Guerrilla acquired all previously released components as well as new cores under development at Gallium Semiconductor with effect from April 26, 2024. All of the associated intellectual property has been transferred to Guerrilla as part of this portfolio acquisition. The sum paid for the acquisition was not disclosed.
Ryan Pratt, CEO and founder of Guerrilla, commented: “Guerrilla RF was already advancing GaN device development as part of its organic growth strategy. The acquisition of Gallium Semiconductor’s portfolio significantly accelerates this strategic initiative. We anticipate this transaction will yield meaningful revenue with favorable margins in the near and long term.”
Henk Thoonen, CEO of Gallium Semiconductor, stated: “Merging these new products into Guerrilla RF’s portfolio is expected to be fast and seamless. Both companies share common foundry partners for GaN and GaAs products and target similar applications and market segments. Guerrilla RF will inherit a diverse range of released and sampling products, encompassing simple, unmatched transistors to fully integrated asymmetric Doherty PAs. With rated peak power levels ranging from 5W to 400W, these products complement Guerrilla RF’s existing portfolio of InGaP HBT and GaAs pHEMT amplifiers which are suited for power levels of 2W and below.”
Guerrilla has begun integrating these Gallium Semiconductor components into its ordering system, with full portfolio integration anticipated by June 2024.
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