High-performance GaN-on-Si white LEDs simplify lighting designs

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By eeNews Europe

Devices in the TL1L3 series of 1.0 W LEDs are supplied in a package with a footprint of 3.5 mm x 3.5 mm and a height, including lens, of 2.42 mm. Despite their small size the LEDs deliver typical luminous flux ratings of between 112 and 145 lumens, depending on the correlated color temperature (CCT).

Toshiba’s latest LEDs with integrated lens are suitable for implementation in tube lights, light bulbs, down lights and ceiling lights, as well as street light and floodlight designs.

The TL1L3 LED series comprises seven devices offering colour temperatures from 2700K to 6500K. Minimum colour rendering index (Ra) ratings of up to 80 contribute to natural looking lighting across all target applications. A low typical forward voltage (VF) of just 2.85 V (at a forward current of 350 mA) helps to keep power consumption to a minimum.

High-performance white LEDs have typically been fabricated on expensive sapphire substrates using relatively small 100 mm or 150 mm wafers. Toshiba LETERAS LEDs, however, use a highly cost-effective GaN-on-Si process technology that allows GaN LEDs to be produced on 200 mm silicon wafers.

TL1L3 LEDs are rated for operating temperatures between -40°C and 100°C and have a maximum power dissipation of 3.4 W. Additionally they offer a low typical thermal resistance Rth(j-s) from LED junction to solderpoint of 5°C/W.


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