High performance SemiQ 1200V SiC module adds S7 Package Option
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SemiQ in the US has added an S7 package to its QSiC family of 1200V, half-bridge MOSFET and Schottky diode SiC power modules.
The SiC modules from SemiQ provide design flexibility for power engineers by providing compact, high-efficiency, high-performance options for new designs while supporting drop-in-replacement in legacy systems that require more efficient operation.
The QSiC family adds a 529A MOSFET module (GCMX003A120S7B1), a 348A MOSFET module (GCMX005A120S7B1), and two low-noise SiC Schottky diode half-bridge modules (GHXS300A120S7D5 and GHXS400A120S7D5) in an S7 package with industry-standard 62.0mm footprints and a height of just 17.0mm.
The S7 package addresses the size, weight and power requirements of demanding applications ranging from induction heaters, welding equipment and uninterruptible power supplies (UPS) to photovoltaic and wind inverters, energy storage systems, high-voltage DC-DC converters and battery charging systems for electric vehicles (EVs).
As well as the compact form factor of the modules themselves, high-efficiency, low-loss operation helps to reduce system heat dissipation and supports the use of smaller heatsinks.
“Our aim is to provide a comprehensive portfolio of SiC technologies that allow designers to optimize the efficiency, performance and size of today’s demanding applications,” says Dr. Timothy Han, President at SemiQ. “Adding new package option to our 1200V QSiC MOSFET and SiC diode module families further extends the choices available to designers who need to create completely new applications or who are looking to upgrade legacy systems without significant redesign.”
To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level for the SiC devices. In addition to the burn-in test, which contributes to mitigating extrinsic failure rates, various stress tests – including gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) – are employed to attain the necessary automotive and industrial grade quality standards. All parts have undergone testing surpassing 1400V.
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Part Numbers |
Circuit Configuration |
Ratings, Packages |
RdsOn mΩ |
|
GCMX003A120S7B1 |
S7 Half-bridge |
1200V/529A, B1 |
3.0 |
|
GCMX005A120S7B1 |
S7 Half-bridge |
1200V/348A, B1 |
4.9 |
|
GHXS300A120S7D5 |
S7 Half-bridge |
1200V/300A, D5 |
|
|
GHXS400A120S7D5 |
S7 Half-bridge |
1200V/400A, D5 |
|
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