High power C-band GaN amplifiers for Satellite Earth Stations

High power C-band GaN amplifiers for Satellite Earth Stations

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Mitsubishi Electric Corporation has developed two High-Electron Mobility Transistor (HEMT) amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867 Gallium Nitride (GaN) amplifiers operate in the C-band (4–8GHz) and provide power outputs of 100W and 50W. Samples will ship in January.
By eeNews Europe

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Gallium Arsenide (GaAs) amplifiers have been commonly employed in microwave power transmitters but in recent years GaN amplifiers have become increasingly popular due to the high breakdown-voltage and power density, high saturated electron speed and ability to contribute to power saving and the downsizing of power transmitter equipment. Mitsubishi first began sample shipments of high-output GaN HEMT amplifiers for C-band space application in March 2010.

The 40V devices have over 43% of power added efficiency and a 10dB linear power gain.

https://www.mitsubishielectric.com/

 

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