High power C-band GaN amplifiers for Satellite Earth Stations
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Mitsubishi Electric Corporation has developed two High-Electron Mobility Transistor (HEMT) amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867 Gallium Nitride (GaN) amplifiers operate in the C-band (4–8GHz) and provide power outputs of 100W and 50W. Samples will ship in January.
Gallium Arsenide (GaAs) amplifiers have been commonly employed in microwave power transmitters but in recent years GaN amplifiers have become increasingly popular due to the high breakdown-voltage and power density, high saturated electron speed and ability to contribute to power saving and the downsizing of power transmitter equipment. Mitsubishi first began sample shipments of high-output GaN HEMT amplifiers for C-band space application in March 2010.
The 40V devices have over 43% of power added efficiency and a 10dB linear power gain.
https://www.mitsubishielectric.com/
