High power C-band GaN amplifiers for Satellite Earth Stations
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By
eeNews Europe
Gallium Arsenide (GaAs) amplifiers have been commonly employed in microwave power transmitters but in recent years GaN amplifiers have become increasingly popular due to the high breakdown-voltage and power density, high saturated electron speed and ability to contribute to power saving and the downsizing of power transmitter equipment. Mitsubishi first began sample shipments of high-output GaN HEMT amplifiers for C-band space application in March 2010.
The 40V devices have over 43% of power added efficiency and a 10dB linear power gain.
https://www.mitsubishielectric.com/
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