High-Power IFF transistor suits L-Band avionics

High-Power IFF transistor suits L-Band avionics

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By Rich Pell

Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates at 1.03 to 1.09 GHz, and supplies a minimum of 120 W of peak pulse power, at 50-V bias voltage and 6.4% duty factor.

Assembled via chip and wire technology, utilizing gold metallization, this device is housed in a metal-based package and sealed with a ceramic-epoxy lid.

This 100% high power RF tested transistor for new designs has 17 dB of gain and a drain efficiency of 75% at ELM Mode S pulse conditions: 48x (32μs On, 18μs Off), 6.4% duty cycle.

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