High speed controller for GaN devices

High speed controller for GaN devices

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By Nick Flaherty

Rohm has modified its high-speed pulse control technology to support gallium nitride (GaN) deices with 2ns pulses to reduce the size of power supply designs.

The Nano Pulse Controller has been used for power supply designs and cuts the pulse width from 9ns to 2ns, This supports higher frequency operation for GaN devices and allows smaller magnetics and peripheral components to be used, reducing the size of the supply. This allows a step down from high voltages up to 60V to low voltages down to 0.6V with a single power supply IC in 24V and 48V applications.

Rohm is currently working to commercialize the control chip using the nano pulse technology, with plans to start sample shipment of 100V 1ch DC-DC Controller in the second half of 2023. Used with Rohm’s EcoGaN devices for base stations, data centres, FA (Factory Automation) equipment, and drones.

“GaN has been highly anticipated for many years as a power semiconductor material that can achieve energy savings, but there are obstacles such as quality and cost,” said GaN researcher Professor Yusuke Mori, Graduate School of Engineering at Osaka University.

“Under these circumstances, Rohm has established a mass production system for GaN devices that deliver improved reliability while also developing Control ICs that can maximize their performance. This represents a huge step towards the widespread adoption of GaN devices. To truly demonstrate the performance of power semiconductors, it is necessary to organically link each technology, such as wafers, devices, Control ICs, and modules,” he said.

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