High-speed, high current gate driver from IXYS RF
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By
eeNews Europe
The IXYS IXRFD630 can source and sink 30A of peak current while producing voltage rise and fall times of less than 4 nsec and minimum pulse widths of 8 nsec. The driver input is compatible with TTL or CMOS and is fully immune to latch-up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. Low quiescent current and a wide operating voltage range make the IXRFD630 unmatched in performance and value. The surface mount IXRFD630 is packaged in a low inductance RF package to minimise stray lead inductances for optimum switching performance in applications such as pulse generators, pulse laser diode drivers and switch mode supplies.
RFMW; www.rfmw.com
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