High-speed integrated IGBT is rated up to 1350-V and 40-A
The N-channel ‘enhancement mode’ GT40RR21 saves space and component count by combining an IGBT and a reverse recovery freewheeling diode into a single, compact monolithic device. Suitable for high-temperature operation, target applications for the IGBT include induction heating and induction cooking appliances.
Toshiba’s new device supports very high-speed operation and can handle peak pulse currents as high as 200 A for 3 µs. Low turn-off switching losses – typically 0.30 mJ at a case temperature (Tc) of 25ºC and 0.54 mJ at a Tc of 125ºC – ensure high-efficiency operation.
The 1350 V GT40RR21 is designed to operate with junction temperatures up to 175ºC. At 25ºC maximum collector current is 40 A, and this falls by 5 A at a temperature of 100ºC. Typical saturation voltage at 25ºC (V CS(sat) ) is only 2.0 V. Maximum diode forward voltage/current is rated at 3.0 V/20 A.
Supplied in a TO-3P(N), TO247-equivalent package, the GT40RR21 measures just 15.5 mm x 20.0 mm x 4.5 mm. Engineering samples are available now and mass production is scheduled for Q3 2012.
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