High-speed, low voltage MOSFETs improve synchronous rectification
Use of Toshiba’s eighth generation N-channel U-MOSVIII-H process has allowed the company to reduce the RDS(ON) * C iss ‘figure of merit’ compared to previous generations by up to 42%. This improves overall efficiency by driving down both conduction and drive losses at the same time as improving switching speeds. The new process technology also helps to minimise radiated noise.
Among the first devices to be launched in the new family are the TK100E08N1 and TK100E10N1 in TO-220 packages and the TK100A08N1 and TK100A10N1 in TO-220SIS ‘smart isolation’ package formats. These ‘best-in-class’ devices have V DSS ratings of 80 V (TK100E08N1 and TK100A08N1) and 100 V (TK100E10N1 and TK100A10N1). Target applications range from AC/DC adaptor and industrial equipment to servers and telecom power designs.
For the TK100*08 MOSFETs typical on resistance (at V GS = 10 V) is rated at 2.6 mΩ and typical C iss is just 9100 pF. In the case of the TK100*10 devices, RDS(ON) (at V GS = 10 V) is 2.8 mΩ for the TO-220 package and 3.2 mΩ for the TO-220SIS package. For both MOSFETs typical C iss is only 8800 pF.
Toshiba’s full range of 80 V and 100 V MOSFETs based on the U-MOSVIII-H process features 18 devices offering a range of RDS(ON) * C iss ratings to match the needs of a broad variety of synchronous rectification applications. In the coming months Toshiba will launch a number of additional 60 V and 120 V devices based on the same technology.