High-speed QspiNAND flash gets sequential read function
High-performance Single-Level Cell (SLC) NAND Flash can be used as a low-cost alternative to the NOR Flash for code storage at densities of 512Mbits and higher. For this purpose, Winbond has developed the Sequential Read function for its latest W25NxxxJW QspiNAND Flash devices. Using the Sequential Read mode, the QspiNAND Flash devices provide the same 52MB/s maximum data rate at 104MHz as in Continuous Read mode, but add the flexibility to configure the chip’s operation.
New options include:
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User’s can use their choice of ECC engine. In Continuous Read mode, the Winbond W25N device only supports its own on-chip 1-bit ECC engine. Sequential Read mode allows users to implement 4-bit, 8-bit or any-bit error correction that is enabled by an external ECC engine.
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Access to the whole memory array – both the Main Area and the Spare Area – using a single Read command. This helps in code shadowing applications where low latency and fast boot time are required.
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Greater flexibility to configure the data arrangement to suit the user’s application.
The new 1.8V QspiNAND Flash products come in densities of 512Mb, 1Gb and 2Gb. 3.0V versions are available in 2Gb and 4Gb densities. All devices are fabricated in Windoend’s 12-inch wafer fabrication facility in Taichung, Taiwan.
W25N QspiNAND Flash devices are available in small 8-pin packages. 104MHz clock speeds provide the equivalent of 416MHz (104MHz x 4) speed for Quad I/O performance when using the Fast Read Dual/Quad I/O instructions. For NAND Flash memory manageability, the devices perform on-chip bad block management.
Key features of the Winbond W25N family of NAND Flash memory products are:
Wide Temperature Range
– -40°C to +85°C operating range in Industrial GRADE
– -40°C to +105°C operating range in Industrial plus and Automotive GRADE
Unique Memory Architecture
– Page Read Time with ECC Enabled: 50µs
– Page Program Time: 250µs (typ.)
– Block Erase Time: 2ms (typ.)
– Fast Program/Erase performance
– Supports OTP Memory Area
High-Performance QspiNAND Flash
– QSPI implementation in 46nm process technology
– More than 10-years data retention
– 104MHz clock frequency that can support up to 52MB/S continuous data transfer rate
Space Efficient Packaging
– WSON8 6x8mm
– WSON8 5x6mm
– TFBGA24 6x8mm
– KGD (Known Good Die)
More information
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