High temperature, 225°C isolated gate driver for SiC and Si power switches
HADES Gen2 is aiming at four key objectives:
– Maximising the benefits of the newest silicon carbide power switches: increased switching frequencies translate into dramatic reduction of the size and weight of the passive and magnetic components; while faster switching times lead to increased energy efficiency of the converters or motor drivers;
– High temperature capability allows location of the driver next to the power switches, hence minimising parasitic inductances;
– Addressing the distinct needs of very high-temperature applications (e.g. 225°C normal operation), as well as of lower temperatures (100~175°C) together with unrivalled silicon lifetime (different temperature categories will be available to address distinct needs);
– Bringing the highest integration level for miniaturisation of the gate driver function, enabling turnkey gate driver modules and Intelligent Power Modules.
The chip has been optimised to meet the requirements of large-volume, cost sensitive applications, including industrial and automotive, for any system running above 100°C. The company says that HADES V2 will be introduced by mid-2014: it will reduce the number of chips in a full 1200V half bridge topology, while bringing higher reliability: a motor drive inverter with a mission profile up to 125°C will reach an expected lifetime of 30 years and more, Cissoid claims – figures that cannot be achieved with traditional solutions today”.
Cissoid will use the HADES V2 chipset to offer a turnkey module version of its gate driver in a reliable hermetic module that will greatly facilitate implementations of power converters with 225°C rating.
Cissoid, www.cissoid.com
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