High voltage GaN transistors deliver high power
The CHK025A GaN transistor features 25 W output power, 55% maximum power added efficiency (PAE) and wideband capability up to a frequency of 5 GHz, compatible with both pulsed and carrier wave operation modes. With a drain to source voltage of 50 V, quiescent drain current is 200 mA.
The CHK040A-SOA transistor offers 40 W minimum output power (50 W maximum), 55% PAE, and a wideband capability up to 3.5 GHz. With a drain to source voltage of 50 V, quiescent drain current is quoted at 300 mA.
The CHK080A device contains two identical GaN transistors to provide 80 W output power, 55% PAE and a frequency range up to 3.5 GHz, compatible with both pulsed and CW operation. With a drain to source voltage of 50 V, quiescent drain current is 600 mA, split equally across both transistors.
All devices in this range are supplied in a low parasitic, low thermal resistance, ceramic package with metal flange, designed for easy mounting on to a thermal heat sink, also used as main electrical ground. These components require additional external matching circuitry.
Designed and manufactured in Europe by United Monolithic Semiconductor, on a 0.5-µm gate length GaN HEMT process, the transistors are RoHS and REACH compliant.
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