High voltage/power MOSFETs target RF and broadband applications
The two higher power, higher voltage VRF2944 and VRF3933 are designed to operate in the industrial, scientific and medical (ISM) frequency range of 2 to 60 MHz. Targeted applications include commercial and defense RF power and broadband communications requiring high power and gain without compromising reliability, ruggedness or inter-modulation distortion.
The industry-leading VRF2944 offers 400 W or 33 percent higher output power at 50 V supply voltages than competitive devices, including the SD2933. Microsemi’s higher power device allows customers to increase the power of existing systems by this same 33 percent or decrease the dollar per W for their RF power systems. In addition, the gate resistor is integrated on the MOSFET which improves parasitic impedance to maintain the maximum operating frequency at 60 MHz. The VRF2944, like the company’s previous generation product, the VRF2933, is capable of operating up to 65 V supply voltages where a single VRF2944 can deliver 675 W of output power.
The VRF3933 is capable of operating up to 100V supply voltages and delivering 300W of output power. The higher voltage MOSFET also gives a higher output impedance, which is easier to match to 50 ohm load. For example, four VRF3933 devices with two in parallel, and those two parallel pairs in push-pull, are capable of launching 1.1 kW with 83 V supply voltage through a 4:1 transformer to a 50 ohm load.
Key features include: higher voltage than many competitive devices for higher output power (Po is proportional to V2); nitride passivated chips for high reliability; gold metallization and gold wire bonds for improved reliability; and access to Microsemi’s Application Engineering Group for design support.