Highly accurate SPICE models for MOSFETs
Toshiba Electronics Europe GmbH has announced the availability of highly accurate G2 SPICE models allowing designers to more faithfully simulate the performance of their designs before committing to hardware. Alongside the existing G0 SPICE models from Toshiba that emphasize computational speed over accuracy, the latest range of G2 SPICE models is now accessible to simulate transient characteristics more accurately.
Simulation is a valuable tool for designers as they reduce the number of prototypes required, saving the need for respins, thereby increasing development efficiency, and reducing overall time, cost, and risk.
In the challenging world of power electronics and automotive design there is a strong demand for preliminary performance predictions of the EMI performance and power dissipation of the entire system. This leads to a growing demand for SPICE models for power semiconductors that can predict power conversion efficiencies, EMI and other relevant parameters.
These new G2 SPICE models for discrete power devices are created using the macro model format, combining multiple compact models to match the structure of the device, representing the electrical characteristics with a few non-linear elements and a continuous arbitrary function. As a result, it has the advantage of limiting the demerits of the macro model as much as possible, which are degradation in circuit simulation convergence and calculation speed due to increase in number of nodes. With this approach, switching simulations are more accurate and closer to actual measurements by improving the reproducibility of the high-current-domain characteristics of the ID-VDS curve, including the voltage-dependent characteristics of the parasitic capacitance.
Available for download, the G2 models cover low voltage MOSFETs (12-V to 300-V) and medium to high voltage MOSFETs (400-V to 900-V). Versions are available for PSpice and LTSpice.
Low voltage MOSFETS feature an optimized trench field plate process and cell structure, which improves the MOSFET performance index, such as on-resistance and capacitance characteristics for each breakdown voltage.
In order to achieve both high breakdown voltage and low on-resistance, the DTMOS series of medium to high voltage MOSFETs uses a superjunction (SJ) structure. The MOSFETs also feature an optimized the cell structure that greatly improves the performance index, including switching speed.