Hotswap MOSFETs double the safe operating area
Nexperia has launched ten 25 V and 30 V MOSFETs optimised for 12V hotswap applications in data centre servers and communications equipment.
The PSMNR67-30YLE ‘application specific’ MOSFETs are designed to tackle in-rush currents during hotswapping of equipment. They have 2.2x the safe operating area (SOA) than previous technologies with 12 V @100 mS while having an RDS(on) (max) down to 0.7 mΩ for higher efficiency.
The Spirito effect (represented by the steeper downward slope found on SOA curves at higher voltages) has been eliminated and the performance is boosted across the full voltage and temperature range. This removes the need to thermally de-rate designs by fully characterizing these new devices at 125 °C and providing hot SOA datasheet curves.
Eight of the hotswap MOSFETs (three 25 V and five 30 V) are available in a choice of LFPAK56 & LFPAK56E packages with RDS(on) ranging from 0.7 mΩ to 2 mΩ to tackle the majority of hotswap and soft start applications. Two additional 25 V products with a lower RDS(on) of 0.5 mΩ are planned for release over the coming months.