Hynix and Toshiba sign joint development for MRAM
Toshiba believes MRAM is an important next-generation memory technology with the potential to sustain future growth in its semiconductor business. Hynix has a cutting-edge memory technology, most notably in manufacturing process optimisation and cost competitiveness.
A number of exceptional features have earned MRAM the status of promising future memory technology. A non-volatile memory, it is also power efficient and operates at ultra-high speed. Applications requiring high-density memory are expected to take advantages of MRAM, and major initial applications are expected in the mobile market, which notably demands low power consumption.
One reason given for merging the necessary resources and expertise is to minimise the risk and to accelerate the pace of MRAM commercialisation. MRAM is a next-generation memory solution that uses magnetic properties to store data.
Unlike DRAM, which distinguishes between 0 and 1 by passing an electron through a capacitor, data in MRAM can be determined by measuring the difference in resistance from magnetization on a magnetic tunnel junction (MTJ). Data is written and saved by reorienting the magnetization of a thin magnetic layer in a tunnel magnetoresistance (TMR) element using a spin-polarized current.
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