IBM research puts SiGe in 7nm test chips
The alliance includes State University of New York’s (SUNY) College of Nanoscale Science and Engineering (CNSE), Globalfoundries, Samsung and STMicroelectronics. The processes and techniques pioneered by the alliance have included the use of silicon germanium (SiGe) in the transistor channel and extreme ultraviolet (EUV) lithography integration at multiple levels. The team is based at SUNY Poly’s NanoTech Complex in Albany.
7nm transistors beneath fins on a 30nm pitch. Source: IBM Research.
The work has been part of IBM’s $3 billion, five-year investment in chip R&D announced in 2014. It comes despite the fact that IBM has sold its chip manufacturing business to Globalfoundries. Also despite the fact that STMicroelectronics has decided not to deploy a 10nm manufacturing process and to end the roadmap for its FDSOI process at 14nm. However, as ST pursues a fabless digital semiconductor strategy, the company is closely aligned with Samsung and Globalfoudries.
Close up of IBM 7nm test chip Source: Daryl Bautista/Feature Photo Servce for IBM.
"Working with our partners, this milestone builds on decades of research that has set the pace for the microelectronics industry, and positions us to advance our leadership for years to come," said Arvind Krishna, senior vice president and director of IBM Research.
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