IDT latest product line starts with 8 GHz RF switch

IDT latest product line starts with 8 GHz RF switch

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By eeNews Europe

The device boasts frequency range of 300 kHz to 8 GHz, achieving broad bandwidth without sacrificing performance across the entire frequency range. A low insertion loss of 0.4 dB provides low path loss without compromising isolation performance.

High isolation of 60 dB at 2 GHz reduces signal leakage between adjacent RF port paths, while a high OIP3 of +64 dBm reduces intermodulation distortion.

A P1dB of 30 dBm, providing 1W compression point, ensures rugged operation for a variety of applications. Switching time is around 1 µs.

The device has 3.3 V and 1.8 V control logic consistent with common FPGA and microcontroller logic levels – no negative supply/control voltage is required. DC current from a 3.3 V line is 20 µA. Operating temperature range is -55 to 125°C for high reliability in harsh thermal environments.

“The F2912 represents IDT’s entry into the RF switch market, where it integrates seamlessly with our other leading RF products to provide engineers a reliable and efficient development path,” said Chris Stephens, IDT’s senior director of Wireless Product Definition and Marketing.

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