II-VI expands SiC wafer factories in Sweden, US

Business news |
By Nick Flaherty

II‐VI is accelerating its investment in 150mm and 200mm silicon carbide (SiC) substrate and epitaxial wafer manufacturing in Sweden and the US.

The company previously announced a $1bn investment over the next ten year, which is being applied to large-scale factory expansions at Kista, Sweden and Easton, Pennsylvania to create one of the world’s largest suppliers.

The expansion of the epitaxial wafer capacity in Kista is aimed at serving the European market. This came from the acquisition of Ascatron. The technology is differentiated by its ability to achieve thick layer structures in single or multiple regrowth steps, which is suited for power devices in applications above 1 kilovolt.

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II-VI will significantly build out its nearly 300,000 square foot factory in Easton, to scale up the production of its state-of-the-art 150 mm and 200 mm SiC substrates and epitaxial wafers. Easton’s 150 mm and 200 mm SiC substrate output is expected to reach the equivalent of 1 million 150 mm substrates annually by 2027, with the proportion of 200 mm substrates growing over time.

“Our customers are accelerating their plans to intersect the anticipated tidal wave of demand for SiC power electronics in electric vehicles that we expect will come right behind the current adoption cycle in industrial, renewable energy, datacentres, and more,” said Sohail Khan, Executive Vice President, New Ventures & Wide-Bandgap Electronics Technologies. “The Easton factory will increase II-VI’s production of SiC substrates by at least a factor of six over the next five years, and it will also become II-VI’s flagship manufacturing centre for 200 mm SiC epitaxial wafers, one of the largest in the world.”

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The II-VI factory at Easton will be powered by an uninterruptible and scalable microgrid based on fuel-cell technology to provide a reliable electricity supply.

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