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Imec and Veeco join forces for gallium nitride on silicon devices

Imec and Veeco join forces for gallium nitride on silicon devices

Technology News |
By eeNews Europe



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In this joint project, imec benefits from Veeco’s metal organic chemical vapor deposition (MOCVD) equipment which offers repeatability, uniformity and high crystal quality. The research centre’s goal is to establish an entire manufacturing infrastructure for GaN-on-Si to become a competitive technology.
Imec‘s multi-partner GaN-on-Si research and development program gathers the industry to jointly develop world-class GaN LED and power devices on 200 mm silicon substrates compatible with a 200mm CMOS-compatible infrastructure. By joining forces at imec, companies share costs, talent and intellectual property to develop advanced technologies and bring them to the market faster.

Jim Jenson, Senior Vice President, General Manager, Veeco MOCVD, commented, “We have been working with imec on this program since 2011 and are encouraged by our progress. Our work is mutually rewarding, as we are both focused on being able to realize lower costs while maintaining world-class performance on GaN-on-Si devices.”

Visit imec at www.imec.be
Visit Veeco at www.veeco.com

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