IMEC makes GaN-on-silicon
These first GaN devices on 200-mm diameter wafers are an important milestone on the path to cost-effective production of power devices in high-productivity 200-mm fabs.
Functional GaN MIS-HEMTs were processed using an advanced MOCVD system from Applied Materials but in general with standard CMOS tools.
Conventionally, gold is used for ohmic contacts and gate structures in power devices, but it makes GaN processing incompatible with conventional CMOS processing. To overcome this, imec based the ohmic contact formation on an Au-free metallization system, and modified the Schottky gate to a gate dielectric based gold-free metal-insulator-semiconductor (MIS) structure. This introduction of the MISHEMT structure had the added advantage of reducing the high leakage current of conventional HEMTs.
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