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Imec, Veeco join forces to make GaN-on-Si devices cheaper

Imec, Veeco join forces to make GaN-on-Si devices cheaper

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By eeNews Europe



According to Imec chief scientsist Barun Dutta, the Belgian researchers utilize Veeco’s production equipment to create GaN-on-Si power devices and LEDs. "The productivity, repeatability, uniformity and crystal quality of Veeco’s metal organic chemical vapor deposition (MOCVD) equipment has been instrumental in helping us meet our development milestones on GaN-on-Si for power and LED applications", Dutta said. "The device performance enabled by the epi has helped us realize state-of-the-art D-mode (depletion mode) and E-mode (enhancement mode) power devices. Our goal is to establish an entire manufacturing infrastructure that allows GaN-on-Si to be a competitive technology.”

Imec’s multi-partner GaN-on-Si R&D program gathers the industry to jointly develop world-class GaN LED and power devices on 200 mm silicon substrates compatible with a 200 mm CMOS-compatible infrastructure. By joining forces at Imec, companies share costs, talent and intellectual property to develop advanced technologies and bring them to the market faster. Veeco works with Imec since 2011.

Veeco claims that its MOCVD equipment features particularly good film quality and low defects, which are key for effective GaN-on-Si processing.

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