Industry’s first 2200V Dual SiC MOSFET module
Toshiba Electronic Devices & Storage has developed the industry’s first 2200V dual silicon carbide (SiC) MOSFET module for industrial equipment.
The MG250YD2YMS3 2200V SiC module has a drain current (DC) rating of 250A and uses the company’s third generation MOSFET chips. It is suitable for applications that use 1500Vdc, such as photovoltaic power systems and energy storage systems. Volume shipments start now.
These industrial applications generally use 1000Vdc or lower power, and the power devices are mostly 1200V or 1700V products. However, anticipating widespread use of 1500Vdc in coming years, Toshiba has released the industry’s first 2200V product.
- 1200V SiC MOSFETs for industrial power conversion
- Showa Denko signs long term SiC deal with Toshiba
- 3.3kV SiC MOSFET module cuts size, boosts efficiency
The MG250YD2YMS3 module offers low conduction loss with a low drain-source on-voltage (sense) of 0.7V (typ.). It also offers lower turn-on and turn-off switching loss of 14mJ (typ.) and 11mJ (typ.) respectively, an approximately 90% reduction against a typical silicon (Si) IGBT.
Low switching loss also allows the conventional three-level circuit to be replaced with a two-level circuit with a lower module count, contributing to equipment miniaturization.
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Main Specifications |
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(Tc=25°C unless otherwise specified) |
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Part number |
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Toshiba’s package name |
2-153A1A |
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Absolute maximum ratings |
Drain-source voltage VDSS (V) |
2200 |
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Gate-source voltage VGSS (V) |
+25 / -10 |
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Drain current (DC) ID (A) |
250 |
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Drain current (pulsed) IDP (A) |
500 |
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Channel temperature Tch (°C) |
150 |
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Isolation voltage Visol (Vrms) |
4000 |
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Electrical characteristics |
Drain-source on-voltage (sense) VDS(on)sense (V) |
ID=250A, VGS=+20V, Tch＝25°C |
typ. |
0.7 |
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Source-drain on-voltage (sense) VSD(on)sense (V) |
IS=250A, VGS=+20V, Tch＝25°C |
typ. |
0.7 |
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Source-drain off-voltage (sense) VSD(off)sense (V) |
IS＝250A, VGS=-6V, Tch＝25°C |
typ. |
1.6 |
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Turn-on switching loss Eon (mJ) |
VDD=1100V, ID=250A, Tch＝150°C |
typ. |
14 |
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Turn-off switching loss Eoff (mJ) |
typ. |
11 |
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Stray inductance LsPN (nH) |
typ. |
12 |
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