Infineon adds 2kV SiC Schottky diode in TO-247 package
Infineon Technologies has launched 2000V SiC Schottky diode in the popular TO-247-2 package as a drop in replacement in solar and EV power designs.
The diode uses the same fifth generation silicon carbide (SiC) process as the previous 2000V SiC diode launched in October last year and supports current ratings ranging from 10 to 80 A for designs with DC link voltages up to 1500V. This cuts the component count in half compared to designs with up to 1200V designs with a two-level topology.
The Schottky diode also uses Infineon’s .XT interconnection technology, which significantly reduces thermal resistance and impedance, enhancing heat management. Humidity robustness has been validated through HV-H3TRB reliability testing and The diodes exhibit neither reverse recovery nor forward recovery, and feature a low forward voltage, ensuring improved system performance.
The 2000 V diode family can be combined with the CoolSiC 2000V MOSFETs in the TO-247Plus-4 HCC package.
The CoolSiC Schottky Diode 2000 V G5 family in TO-247-2 is available now. In addition, Infineon offers an evaluation board for the 2000 V CoolSiC product family, as well as a matching gate driver portfolio.
www.infineon.com/diodes-2000v-g5.
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