
Infineon Technologies has extended its range of 2 x 2mm2 PQFN power MOSFETs
The PQFN packages give the OptiMOS 6 40V and OptiMOS 5 25 V and 30 V power MOSFETs a thermal resistance (R thJC, max) of 3.2 K/W with an on-resistance R DS(on) down to 2.4mΩ.
A small footprint of discrete power MOSFETs plays a critical role in achieving space savings, cost reduction, and easy-to-design applications. Additionally, higher power density can lead to layout routing flexibility and overall system size reduction.
- Package boost for Source-Down power MOSFETs
- Infineon adds PQFN Dual-Side Cooling to 25-150 V portfolio
The new devices are aimed at synchronous rectification in switched mode power supplies (SMPS) for servers, telecom, and portable- and wireless chargers. Additional applications also include electric speed controllers for small brushless motors in drones.
The PQFN 2×2 mm² package outline, the OptiMOS power switches enable an improved system form factor with smaller, more flexible geometric outlines for end-user applications. The MOSFETs facilitate reliable system design with less need for paralleling, significantly reducing space and system cost.
The ISK057N04LM6 40V MOSFET 40 V has a 5.7mΩ R DS(on) while the 25V ISK024NE2LM5 is 2.4 mΩ and the 30 V ISK036N03LM5 is 3.6mΩ.
www.infineon.com/optimos-6-40v; www.infineon.com/pqfn-2×2
