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Infineon extends its PQFN 2×2 mm² power MOSFETs

Infineon extends its PQFN 2×2 mm² power MOSFETs

New Products |
By Nick Flaherty



Infineon Technologies has extended its range of 2 x 2mm2 PQFN power MOSFETs

The PQFN packages give the OptiMOS 6 40V and OptiMOS 5 25 V and 30 V power MOSFETs a thermal resistance (R thJC, max) of 3.2 K/W with an on-resistance R DS(on) down to 2.4mΩ.

A small footprint of discrete power MOSFETs plays a critical role in achieving space savings, cost reduction, and easy-to-design applications. Additionally, higher power density can lead to layout routing flexibility and overall system size reduction.

The new devices are aimed at synchronous rectification in switched mode power supplies (SMPS) for servers, telecom, and portable- and wireless chargers. Additional applications also include electric speed controllers for small brushless motors in drones.

The PQFN 2×2 mm² package outline, the OptiMOS power switches enable an improved system form factor with smaller, more flexible geometric outlines for end-user applications. The MOSFETs facilitate reliable system design with less need for paralleling, significantly reducing space and system cost.

The ISK057N04LM6 40V MOSFET 40 V has a 5.7mΩ R DS(on) while the 25V ISK024NE2LM5 is 2.4 mΩ and the 30 V ISK036N03LM5 is 3.6mΩ.

www.infineon.com/optimos-6-40v; www.infineon.com/pqfn-2×2

 

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