Infineon extends silicon carbide diodes’ figure-of-merit in 6th generation
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By
eeNews Europe
The G6 CoolSiC diode has a revised layout, cell structure, and a new proprietary Schottky metal system. The result is an industry benchmark VF (forward voltage) of 1.25 V, and a Qc x VF figure of merit (FOM) which is 17% lower than the previous generation. The G6 diode makes use of the SiC strong characteristics of temperature independent switching behaviour and no reverse recovery charge. The design of the device provides improved efficiency over all load conditions along with increased system power density and extremely fast switching.
Infineon; www.infineon.com/coolsic-g6
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