Infineon grabs lead in power MOSFET sector
Infineon’s market share of 12.3 per cent in 2013 means that the company has led the power semiconductors market for the eleventh time in a row and looks set to continue this dominance following the company’s $3 billion acquisition of International Rectifier announced last month. The Munich-based chipmaker intends to close its technology gap in the promising GaN segment and is looking to better utilize its 300mm wafer fab in Dresden, Germany to capacity.
Although Infineon has estblished a strong position in Silicon Carbide (SiC) technology, the International Rectifier aquisition will give the German chip maker a stronger hand in Gallium Nitride (GaN) technology sector.
The global market for power semiconductors dropped by 0.3 per cent to around $15.4 billion in 2013. But despite the weaker environment, Infineon increased its turnover, thereby boosting its market share by 0.9 percentage points compared to the previous year to 12.3 per cent.
In the MOSFET power transistor segment, the company grew its market share by 1.6 percentage points to 13.6 per cent, thereby becoming the largest provider in this segment for the first time. Infineon also gained market shares in the submarkets for discrete IGBT power transistors (first place with 24.7 per cent) and IGBT modules (second place with 20.5 per cent).
“Infineon’s strategy proved right: By taking the step from product-oriented thinking towards a systems-level perspective, we are offering our customers just the right products to become even more successful. Our continuous gains in the field of MOSFET power transistors are impressive evidence of this. Even in a weaker market phase, we have managed to continue on our growth path,” suggested Dr. Reinhard Ploss, CEO of Infineon Technologies AG.
Related articles and links:
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