Infineon H7 650V IGBT adds diode

Infineon H7 650V IGBT adds diode

New Products |
By Nick Flaherty

Cette publication existe aussi en Français

Infineon Technologies has expanded its 7th generation TRENCHSTOP IGBT family with a 650V H7 variant.

The H7 IGBT devices feature an EC7 co-packed diode with an advanced emitter-controlled design, coupled with high-speed technology to address the escalating need for environmentally conscious and highly efficient power solutions.

The IGBT7 H7 uses the latest micro-pattern trench technology to improve the control and performance of the device, resulting in significant loss reduction, improved efficiency and higher power density. The device is aimed at string inverters, energy storage systems (ESS), electric vehicle charging applications, and traditional applications such as industrial UPS and welding.

In a discrete package, the H7 can deliver from 40 A to 150 A, offered in four different package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus.

The TO-247-3 HCC variant of the H7 features a high creepage distance. For improved performance, the TO-247 4-pin Kelvin packages reduce switching losses, but also offer additional benefits such as lower voltage overshoot, minimized conduction losses and the lowest reverse current loss. This simplifies the design and minimizes the need to connect devices in parallel.

The 650V H7 IGBT also features robust moisture resistance for reliable operation in harsh environments and is qualified for industrial use according to the relevant tests of JEDEC47/20/22, especially HV-H3TRB, making it well suited for outdoor applications.

The TRENCHSTOP IGBT 7 H7 can be ordered now. In addition, qualification samples are available.


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