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Infineon offers space qualified parallel interface F-RAM

Infineon offers space qualified parallel interface F-RAM

New Products |
By Jean-Pierre Joosting



Infineon has announced availability of the industry’s first radiation-hardened (rad hard) 1 and 2 Mb parallel interface nonvolatile ferroelectric-RAM (F-RAM) devices.

These F-RAM products add to an extensive portfolio of memories from Infineon that feature unsurpassed reliability and endurance, with up to 120 years of data retention at 85-degree Celsius, along with random access and full memory write at bus speeds.

Infineon F-RAM devices are intrinsically rad hard, and the technology is ideally suited for the evolving mission requirements of space-based applications that historically have used slower, less rugged EEPROM nonvolatile storage devices. Features compared to alternatives include faster memory random access, better data security with instant non-volatile write technology and low power, with extremely low programming voltage down to 2 V and maximum operating current of 20 mA.

“As more space applications are architected to process data on-system, and not on-ground via telemetry, there is increasing demand for high-reliability non-volatile memory to work in tandem with space-grade processors and FPGAs for data-logging applications,” said Helmut Puchner, Vice President, Fellow Aerospace and Defense, Infineon Technologies. “Infineon introduced the first SPI F-RAM devices for this market in 2022, and the addition of parallel interface devices reflects our commitment to delivering best-in-class, highly reliable and flexible solutions for next-generation space requirements.”

Target applications for the rad hard F-RAM devices include data storage for sensors and instruments, data logging for calibration data, secure key storage for data encryption, and boot code storage. In addition to outer space, they are also suitable for avionic and other applications that require military standard temperature grades (-55°C to 125°C).

Like the SPI version, the chemical composition of the new Infineon parallel interface F-RAM devices results in exceptional non-volatile memory features, including instantaneous switching of atomic state, instead of a trapped charge to program bits in EEPROM technologies. F-RAM is inherently immune to soft errors and magnetic field or radiation effects. There is no requirement for software to manage page boundaries, and near infinite endurance (1013 write cycles) means there is no need for wear leveling. 

The parallel devices are packaged in 44-lead ceramic TSOP and the QML-V qualified devices have superior radiation performance of:

  • TID: >150 Krad (Si)
  • SEL: >96 MeV·cm2/mg at 115°C
  • SEU: Immune
  • SEFI: <1.34 * 10-4 err / dev.day (active/standby) / Immune (sleep mode)

The complete portfolio of rad hard F-RAM non-volatile memories, including 2 Mb SPI and 1 and 2 Mb parallel devices, is available now.

www.infineon.com/1and2MbFRAM

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