Infineon returns to SiC JFETs for smarter and faster solid-state power distribution
Infineon Technologies has developed a new family of silicon carbide JFETs for solid-state protection and distribution designs.
JFETs control conductivity with an electric field across a reverse-biased PN junction, rather than the transverse electric field across an insulating layer that is used in a MOSFET.
This G1 ‘first generation’ of CoolSiC JFETs features ultra-low R DS(ON) starting at 1.5 mΩ (750 V BDss) and 2.3 mΩ (1200 V BDss), significantly reducing conduction losses. The bulk-channel optimized SiC JFET offers high robustness under short-circuit and avalanche failure conditions.
The predictable switching behaviour under thermal stress, overload and fault conditions provides maximum long-term reliability in continuous operation.
The CoolSiC JFET minimizes conduction losses, improves the solid turn-off capability and provides high robustness. The robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control enables reliable and efficient system performance.
This can be used in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches.
“With CoolSiC JFET, we are addressing the growing demand for smarter, faster, and more robust power distribution systems,” says Dr Peter Wawer, Division President Green Industrial Power at Infineon Technologies. “This application-driven power semiconductor technology is specifically designed to provide our customers with the tools they need to solve the complex challenges in this rapidly evolving space. We are proud to introduce devices that achieve best-in-class R DS(ON), setting a new standard for SiC performance and reaffirming Infineon’s leadership in the field of wide-bandgap technology.”
The devices use a Q-DPAK top-side cooled package for easy paralleling and scalable current handling, enabling compact, high-power systems with flexible layout and integration options. The Infineon .XT interconnection technology with diffusion soldering meets the thermal and mechanical challenges of harsh application environments. This significantly improves transient thermal impedance and robustness under pulsed and cyclic loads typical of industrial power systems.
Engineering samples of the CoolSiC JFET family will be available later in 2025, with volume production starting in 2026. The product portfolio will be further expanded with a variety of packages and modules.
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