Infineon shows its first 300m GaN wafer
Infineon Technologies has developed devices on its first 300mm power gallium nitride (GaN) wafer.
The 300mm GaN wafer was developed on an integrated pilot line in existing 300 mm silicon production in the Infineon power fab in Villach, Austria, using its 300mm silicon and 200mm GaN process technologies.
Infineon says it will further scale GaN capacity aligned with market needs for power supplies for AI systems, solar inverters, chargers and adapters, and motor-control systems. The bigger wafer diameter fits 2.3 times as many chips than a 200mm wafer.
This follows the acquisition of GaN Systems in 2023. Shin-Etsu last week announced it had developed 300mm GaN wafers.
1200V GaN-on-Si reaches 300mm wafers
A significant advantage of 300 mm GaN technology is that it can utilize existing 300 mm silicon manufacturing equipment, since gallium nitride and silicon are very similar in manufacturing processes. Infineon’s existing high-volume silicon 300 mm production lines are ideal to pilot reliable GaN technology, allowing accelerated implementation and efficient use of capital. Fully scaled 300 mm GaN production will contribute to GaN cost parity with silicon with a comparable on resistance for MOSFET devices.
“This remarkable success is the result of our innovative strength and the dedicated work of our global team to demonstrate our position as the innovation leader in GaN and power systems,” said Jochen Hanebeck, CEO of Infineon Technologies.
“The technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market. As a leader in power systems, Infineon is mastering all three relevant materials: silicon, silicon carbide and gallium nitride.”
Infineon will show the 300mm GaN wafers at electronic in Germany in November.
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