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Infineon shows production GaN devices

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By Christoph Hammerschmidt


The CoolGaN 600 V e-mode HEMTs and GaN EiceDRIVER chips offer a higher power density enabling smaller and lighter designs, lower overall system cost and operating expense as well as a reduction in capital expenditure. The launches mean Infineon is currently the only company in the market offering a full-spectrum portfolio of all power technologies – silicon (Si), silicon carbide (SiC) and GaN.

The CoolGaN 600 V e-mode HEMTs are built with a reliable normally-off concept, optimized for fast turn-on and turn-off. They enable high efficiency and density levels in switched mode power supplies (SMPS) showing the best figures of merit (FOMs) of all currently available 600 V devices. CoolGaN switches come with lowest gate charge and excellent dynamic performance in reverse conduction. This allows much higher frequency operations, improving power density by reducing the overall size of passive components. They also enable power factor correction (PFC) efficiency over 99.3 percent for a 2.5 kW PFC design and significantly higher density for the same efficiency, over 160 W/in3 for a 3.6 kW LLC with over 98 percent efficiency. The linear output capacitance leads to 8-10 times lower dead time in resonant topologies.

Reliability of GaN devices is a key concern, and during the quality management process the device is thoroughly tested discretely and in the application environment. The CoolGaN 600 V switches are available with 70 mΩ and 190 mΩ in SMD packages, guaranteeing excellent thermal performance and low parasitics. By offering a full SMD package series, Infineon aims to support high frequency operations in applications such as enterprise and hyperscale data center servers, telecom rectifiers, adapters, chargers, SMPS and wireless charging.

The associated drivers – the 1EDF5673K, 1EDF5673F and 1EDS5663H – ensure robust and highly efficient CoolGaN switch operation while minimizing R&D efforts and shortening time-to-market.

Unlike gate drivers for power MOSFETs, the EiceDRIVER chips provide a negative output voltage to rapidly turn off GaN switches. For the entire duration the switch is intended to be off, the drivers can firmly hold the gate voltage at zero, protecting the GaN switch against spurious turn-on, even for the first pulse, which is essential for robust SMPS operations. The GaN gate driver ICs allow constant GaN HEMT switching slew rates, virtually independent from duty cycle or switching frequency. This ensures operational robustness and high power efficiency, and greatly reduces R&D time. Galvanic isolation is integrated for operational robustness in hard switching applications. It also provides protection between the primary and secondary side of an SMPS and between power and logic stages where needed.

The GaN EiceDRIVER 1EDF5673K comes in a 13-pin LGA 5×5 mm, the 1EDF5673F in a 16-pin DSO 150 mil, and the 1EDS5663H in a 16-pin DSO 300 mil package.

The new CoolGaN 600 V e-mode HEMTs are available now and the silicon-based GaN EiceDRIVER ICs can be preordered.

www.infineon.com/gan and www.infineon.com/gan-eicedriver

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