Infineon takes SiC MOSFET down to 400V for AI server power supplies
Infineon Technologies is extending its SiC MOSFETs to voltages below 650 V for AC-DC power converters.
The CoolSiC MOSFET 400 V family is based on the second generation (G2) CoolSiC technology introduced earlier this year and was specially developed for use in the AC-DC stage of AI servers.
The increasing power requirements of Artificial Intelligence (AI) processors are driving server power supplies (PSUs) to deliver more and more power without exceeding the defined dimensions of the server racks. This is driven by a surge in energy demand of high-level GPUs, which could consume 2 kW and more per chip by the end of the decade.
The SiC MOSFET family has lower conduction and switching losses than the existing 650 V SiC and silicon MOSFETs. Implemented in a multi-level PFC, the AC-DC stage of the AI Server PSU can attain a power density of 100 W/in³ in a 12kW reference design and Infineon says can reach 99.5 percent efficiency. This is an efficiency improvement of 0.3 percentage points over solutions using 650 V SiC MOSFETs and are used alongside GaN devices in the DC-DC stage.
The devices are also suitable for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS) as well as solid-state circuit breakers for residential buildings.
“Infineon offers an extensive portfolio of high-performance MOSFETs and GaN transistors to meet the demanding design and space requirements of AI server power supplies”, said Richard Kuncic, Head of the Power Systems Business Line at Infineon. “We are committed to supporting our customers with advanced products such as the CoolSiC MOSFETs 400 V G2 to drive highest energy efficiency in advanced AI applications.”
The MOSFET portfolio comprises a total of 10 products: five R DS(on) classes from 11 to 45 mΩ in Kelvin-source TOLL and D²PAK-7 packages with .XT package interconnect technology. The drain-source breakdown voltage of 400 V at T vj = 25°C. makes the SiC MOSFET suitable for use in 2- and 3-level converters and for synchronous rectification.
The components offer high robustness under harsh switching conditions and are 100 percent avalanche tested.
Engineering samples of the CoolSiC MOSFET 400 V portfolio are now available and will go into series production from October 2024 and will be shown at the PCIM Europe 2024 exhibition in June.
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