
Infineon to supply 1200V SiC MOSFETs to Forvia Hella
Forvia Hella in Germany is to use 1200V silicon carbide (SiC) MOSFETs from Infineon Technologies for its next generation 800 V DC-DC charging systems.
The SIC MOSFETs come in a Q-DPAK package with top-side cooling (TSC) for thermal management in on-board charger and DC-DC applications in 800 V automotive architectures.
The parts use Infineon’s Gen1p technology and provide a drive voltage in the range of V GS(off)= 0 V and V GS(on)= 20 V. The 0 V turn-off enables unipolar gate control, which simplifies design by reducing the number of components in the PCB.
With a creepage distance of 4.8 mm, the package achieves an operating voltage of over 900 V without the need for additional insulation coating. Compared to backside cooling, the TSC technology ensures optimized PCB assembly, reducing parasitic effects and resulting in significantly lower leakage inductances. This gives system designers lower package parasitics and lower switching losses. Heat dissipation is further improved by diffusion soldering the chip with .XT technology.
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“We are excited to continue our partnership with Forvia Hella, leveraging our high-efficiency SiC products based on TSC packages,” said Robert Hermann, Vice President of Automotive High-Voltage Chips and Discretes at Infineon. “We are continuously working to take e-mobility to the next level by providing SiC solutions that meet the automotive industry’s stringent requirements for performance, quality, and system cost.”
“Our customers are at the center of our efforts. That is why we have chosen Infineon’s CoolSiC Automotive MOSFET 1200 V for our next generation of DC-DC converters”, said Guido Schütte, Member of the Electronics Executive Board at Forvia Hella. “Together with Infineon, we will continue to offer sustainable and innovative products and comprehensive services that exceed our customers’ expectations and drive the development of advanced mobility.”
The CoolSiC Automotive MOSFET 1200 V in a Q-DPAK package is available now.
