Innoscience extends its 650-V HEMT family
Innoscience Technology has announced a full range of 650-V E-mode GaN HEMT devices. New 190 mΩ, 350 mΩ and 600 mΩ RDS(on) devices in industry-standard 8×8 and 5×6 DFN packages join previously-announced 140 mΩ, 240 mΩ and 500 mΩ RDS(on) parts, creating a significant portfolio of available devices.
Importantly, the 650-V HEMTs are all qualified to JEDEC standards for chip and package. Further, the Innoscience devices have also passed Dynamic High Temperature operating life test (DHTOL) reliability testing according to JEP180 — the newly-released JEDEC guidelines dedicated to GaN technology. In addition, the 650-V HEMT devices (InnoGaN) have undergone accelerated life tests beyond 1000 V that give lifetime calculations of 36 years at 80% of the rated voltage (520-V; 150°C; 0.01% failure rate).
The new devices also feature very good drain source voltage transient (VDS, transient) of 800 V for non-repetitive events with an extended pulse time up to 200 µs and a pulsed (VDS, pulsed) characteristics for repetitive pulse up to 100 ns of 750-V for the 190 mΩ RDS(on) parts. These are best-in-class characteristics. Moreover, similarly to the 650-V HEMT products, the new 190 mΩ, 350 mΩ and 600 mΩ RDS(on) devices all feature a strong ESD protection circuit embedded in the die to ease mass production assembly of these device in package and easy handling.
Possible applications of these new Innoscience devices include PFC converters, DC-DC converters, LED drivers, fast battery chargers, notebook and all-in-one (AiO) adaptors and power supply for desktop PC, TV, power tools, and so on.
Comments Yi Sun, Sr VP of product development at Innoscience: “These new devices complete our 100-600 mΩ device portfolio at 650 V. I am especially pleased to add the 650-V/190-mΩ HEMT, as it is becoming a standard in the GaN industry that offers greater flexibility to customers upon selecting suppliers for their applications.”
Because GaN devices do not have a body diode, reverse recovery losses are much less than silicon MOSFETs and the Figure Of Merit (FOM) is much better. This means that GaN HEMTs, such as these new 650-V parts, can be used in simple totem pole configurations for PFC applications, and benefit from the reduced BOM count without incurring the high losses as it would be with conventional silicon devices. This benefit, combined with the high frequency capabilities of InnoGaN, helps to reduce the size of passives and results in more compact systems.
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