Innoscience grabs former senior NXP engineer to lead R&D
Innoscience Technology Co. Ltd., a Chinese startup that manufactures GaN-on-Si power transistors, has recruited former NXP executive Jan Sonsky as vice president of engineering.
Sonsky previously spent 19 years with NXP Semiconductors where he was the senior engineer behind NXP’s gallium nitride strategy and rose to the position of technical director for analog and power.
Sonsky will now lead a newly-opened Innoscience GaN R&D center in Leuven, Belgium. He has been asked to lead the development of next-generation technologies in collaboration with the company’s R&D team at Innoscience’s headquarters in Suzhou, China.
Innoscience, founded in December 2015, claims to be the world’s biggest manufacturer of GaN-on-Si power transistors. The company opened its first 200mm wafer fab for GaN-on-Si production in Zhuhai in November 2017 and second wafer fab in Suzhou in September 2020. Currently the company has a capacity of 10,000 8-inch wafers per month which will ramp up to 14,000 8-inch wafers per month later this year and 70,000 8-inch wafers per month by 2025.
Sonsky has 20 years of experience in R&D in the semiconductor industry. Previously he has contributed and driven both GaN and silicon technology developments for mobile and automotive applications for NXP Semiconductor.
Innoscience’s R&D is situated close to research institute IMEC and KU Leuven and is the latest addition to the so-called ‘GaN Valley’.
Denis Marcon, general manager of Innoscience Europe, said: “Our devices are already delivering excellent performance at both low voltages (30V to 150V) and high voltage (650V) ratings. We expect the new R&D centre to deliver even better performance, smaller size and ultra-reliability.”
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