Input-protected LNAs handle RF inputs up to 1W CW
The new line consists of 12 different models that cover a broad range of frequency bands from 10MHz to 3.5GHz. These designs exhibit typical performance that includes low noise figure levels from 0.8 to 1.6dB, high-small signal gain ranging from 25 to 40dB, and low VSWR levels from 1.3:1 to 1.5:1. This performance is achieved through the use of hybrid MIC designs that incorporate PIN diode limiter circuitry and Enhancement mode (Emode) GaAs pHEMT semiconductor devices. These amplifiers operate with a bias voltage of +12V typical over the temperature range of -40 to +85°C. The 50 Ohm, SMA connectorized modules are unconditionally stable, include built-in voltage regulation and have DC blocking capacitors on the RF ports.
Pasternack – www.pasternack.com
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