Integrated transformers, GaN help TI shrink power system design
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Texas Instruments (TI) has introduced two new power conversion device portfolios to help engineers boost power density.
A 1.5W isolated DC-DC converter module from TI has integrated transformers to help engineers shrink the isolated bias power-supply size in automotive and industrial systems by over 89%.
A 100V integrated gallium nitride (GaN) power stage has thermally enhanced dual-side cooled package technology to simplify thermal designs and achieve the highest power density in mid-voltage applications at more than 1.5kW/in3.
“For power-supply designers, delivering more power in limited spaces will always be a critical design challenge,” said Kannan Soundarapandian, general manager of High Voltage Power at TI. “Take data centers, for example – if engineers can design power-dense server power-supply solutions, data centers can operate more efficiently to meet growing processing needs while also minimizing their environmental footprint. We’re excited to continue to push the limits of power management by offering innovations that help engineers deliver the highest power density, efficiency and thermal performance.”
- TI integrates transformer into DC-DC converter in chip package
- TI shakes up power with integrated 650V GaN FET
The UCC33420-Q1 and UCC33420 1.5W DC-DC converter modules with 3kV isolation enable a power density eight times higher than discrete solutions and three times higher power density than competing modules says TI.
These are used for both automotive and industrial systems and integrate the transformers into a 4mm-by-5mm very thin small outline no-lead (VSON) package for a bias design. The transformers are optimised for the integration in the module to help designers meet stringent electromagnetic interference (EMI) requirements, such as CISPR 32 and 25 with fewer components and a simple filter design.
With the first automotive-qualified solution in this small package, designers can now reduce the footprint, weight and height of their bias supply solution for electric vehicle systems such as battery management systems. For space-constrained industrial power delivery in data centres, the new module enables designers to minimize printed circuit board area.
The LMG2100R044 and LMG3100R017 100V GaN power stages reduce the size of the power supply for mid-voltage applications by more than 40% and achieve industry-leading power density of over 1.5kW/in3, enabled by GaN technology’s higher switching frequencies that means less windings are needed in the transformer.
The GaN power stages also reduce switching power losses by 50% compared to silicon-based solutions, while achieving 98% or higher system efficiency given the lower output capacitance and lower gate-drive losses. In a solar inverter system, for example, higher density and efficiency enables the same panel to store and produce more power while decreasing the size of the overall microinverter system.
A key enabler of the thermal performance in the 100V GaN portfolio is the thermally enhanced dual-side cooled package. This technology enables more efficient heat removal from both sides of the device and offers improved thermal resistance compared to competing integrated GaN devices.
TI is showing the latest automotive and industrial designs for 48V automotive power at the APEC 2024 exhibition in the US this week, including the first USB Power Delivery Extended Power Range full charging solution on the market, an 800V, 300kW silicon carbide-based traction inverter and a high-efficiency power supply for server motherboards.
Production quantities of the LMG2100R044 and LMG3100R017 100V GaN power stages are available for purchase now on TI.com.
Preproduction quantities of the UCC33420 and UCC33420-Q1 1.5W isolated DC/DC modules are available for purchase now on TI.com. Other versions of these devices with lower input voltages, output voltages and power ratings are expected to be available in second quarter of 2024.
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